AEC其实是Automotive Electronics Council汽车电子协会的简称,并且AECQ标准包括以下几个领域,对于不同领域的电子器件,适用于不同的标准。目前见到的比较多的是AEC-Q100、AEC-Q101、AEC-Q200。
(资料图片仅供参考)
标准类别 | 适用领域 |
AEC-Q100 | 集成电路IC |
AEC-Q101 | 分立器件 |
AEC-Q102 | 离散光电LED |
AEC-Q103 | 传感器 |
AEC-Q104 | 多芯片组件 |
AEC-Q200 | 被动器件 |
类似于一般汽车零部件的DV测试,AECQ标准其实也就是一种对芯片本身的设计认可的测试标准,分为不同的测试序列,对芯片进行不同维度的测试。
由于最火热的芯片是目前全国甚至全世界的焦点,就先来看看关于芯片的测试标准。AEC-Q100一共分为13个子标准,分别是AEC-Q100主标准和从001到012的12个子标准。
标准编号 | 标准名 | 中文含义 |
AEC-Q100 Rev-H | Failure Mechanism Based Stress Test Qualification For Integrated Circuits(base document | 基于集成电路应力测试认证的失效机理 |
AEC-Q100-001 | Wire Bond Shear Test | 邦线切应力测试 |
AEC-Q100-002 | Human Body Model (HBM) Electrostatic Discharge Test | 人体模式静电放电测试 |
AEC-Q100-003 | Machine Model (MM) Electrostatic Discharge Test | 机械模式静电放电测试 |
AEC-Q100-004 | IC Latch-Up Test | 集成电路闩锁效应测试 |
AEC-Q100-005 | Non-Volatile Memory Program/Erase Endurance, Data Retention, and Operational Life Test | 非易失性存储程序/擦除耐久性、数据保持及工作寿命的测试 |
AEC-Q100-006 | Electro-Thermally Induced Parasitic Gate Leakage Test (GL) | 热电效应引起的寄生门极漏电流测试 |
AEC-Q100-007 | Fault Simulation and Test Grading | 故障仿真和测试等级 |
AEC-Q100-008 | Early Life Failure Rate (ELFR) | 早期寿命失效率 |
AEC-Q100-009 | Electrical Distribution Assessment | 电分配的评估 |
AEC-Q100-010 | Solder Ball Shear Test | 锡球剪切测试 |
AEC-Q100-011 | Charged Device Model (CDM) Electrostatic Discharge Test | 带电器件模式的静电放电测试 |
AEC-Q100-012 | Short Circuit Reliability Characterization of Smart Power Devices for 12V Systems | 12V 系统灵敏功率设备的短路可靠性描述 |
如同DV测试的序列和分类,芯片的测试认证一共包括7个序列,分别如下,而这七个序列的测试也是分别引用AEC-Q100中定义的那些测试方法。
测试序列A | 环境压力加速测试,Accelerated Environment Stress |
测试序列B | 使用寿命模拟测试,Accelerated Lifetime Simulation |
测试序列C | 封装组装整合测试,Package Assembly Integrity |
测试序列D | 芯片晶圆可靠度测试,Die Fabrication Reliability |
测试序列E | 电气特性确认测试,Electrical Verification |
测试序列F | 瑕疵筛选监控测试,Defect Screening |
测试序列G | 封装凹陷整合测试,Cavity Package Integrity |
芯片的测试也是有一定的测试顺序,这个顺序在AEC-Q100的标准中也是有所定义的。一共7个测试序列,按照两个层级一共加起来42个测试项目,这些测试项目并不是适用于所有IC,需要根据IC的种类进行适配性的测试,也需要根据芯片的温度等级来进行测试条件的修改。
而测试温度也就是通常所说的Grade等级。在汽车芯片里,分为4个温度等级,分别如下:
对于每个测试序列中的详细测试项目,也在AEC-Q100标准中有详细的描述,并且每种测试的测试时间也根据Grade等级给出了不同的要求。在AEC-Q100的测试中,对于序列A中,测试的样品数很多都是77个,并且要求0 Fails,这就极大得增加了芯片测试的置信度。
TEST GROUP A – ACCELERATED ENVIRONMENT STRESS TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
A1 | Preconditioning | PC | 77 |
A2 | Temperature Humidity-Bias or Biased HAST | THB or HAST | 77 |
A3 | Autoclave or Unbiased HAST or Temperature Humidity (without Bias) | AC or UHSTor TH | 77 |
A4 | Temperature Cycling | TC | 77 |
A5 | Power Temperature Cycling | PTC | 45 |
A6 | High Temperature Storage Life | HTSL | 45 |
TEST GROUP B – ACCELERATED LIFET | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
B1 | High Temperature Operating Life | HTOL | 77 |
B2 | Early Life Failure Rate | ELFR | 800 |
B3 | NVM Endurance, Data Retention, and Operational Life | EDR | 77 |
TEST GROUP C – PACKAGE ASSEMBLY INTEGRITY TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
C1 | Wire Bond Shear | WBS | 30 bonds from a minimumof 5 devices |
C2 | Wire Bond Pull | WBP | |
C3 | Solderability | SD | 15 |
C4 | Physical Dimensions | PD | 10 |
C5 | Solder Ball Shear | SBS | 5 balls from a min. of 10devices |
C6 | Lead Integrity | LI | from each 10 leads of 5 parts |
TEST GROUP D – DIE FABRICATION RELIABILITY TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
D1 | Electromigration | EM | --- |
D2 | Time Dependent Dielectric Breakdown | TDDB | --- |
D3 | Hot Carrier Injection | HCI | --- |
D4 | Negative Bias Temperature Instability | NBTI | --- |
D5 | Stress Migration | SM | --- |
TEST GROUP E – ELECTRICAL VERIFICATION TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
E1 | Pre- and Post-Stress Function/Parameter | TEST | All |
E2 | Electrostatic Discharge Human Body Model | HBM | See TestMethod |
E3 | Electrostatic Discharge Charged Device Model | CDM | See TestMethod |
TEST GROUP E – ELECTRICAL VERIFICATION TESTS (CONTINUED) | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
E4 | Latch-Up | LU | 6 |
E5 | Electrical Distributions | ED | 30 |
E6 | Fault Grading | FG | --- |
E7 | Characterization | CHAR | --- |
E9 | Electromagnetic Compatibility | EMC | 1 |
E10 | Short Circuit Characterization | SC | 10 |
E11 | Soft Error Rate | SER | 3 |
E12 | Lead (Pb) Free | LF | See Test Method |
TEST GROUP F – DEFECT SCREENING TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
F1 | Process Average Testing | PAT | --- |
F2 | Statistical Bin/Yield Analysis | SBA | --- |
TEST GROUP G – CAVITY PACKAGE INTEGRITY TESTS | |||
# | STRESS | ABV | SAMPLE SIZE / LOT |
G1 | Mechanical Shock | MS | 15 |
G2 | Variable Frequency Vibration | VFV | 15 |
G3 | Constant Acceleration | CA | 15 |
G4 | Gross/Fine Leak | GFL | 15 |
G5 | Package Drop | DROP | 5 |
G6 | Lid Torque | LT | 5 |
G7 | Die Shear | DS | 5 |
G8 | Internal Water Vapor | IWV | 5 |
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